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  Datasheet File OCR Text:
 Equivalent circuit
C
Darlington
2SD2560
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE=-2A VCB=10V, f=1MHz 2SD2560 100max 100max 150min 5000min 2.5max 3.0max 70typ 120typ V V MHz pF
20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1
B
(7 0 )
E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2560 150 150 5 15 1 130(Tc=25C) 150 -55to+150 Unit V V V A A W C C
Application : Audio, Series Regulator and General Purpose
(Ta=25C) Unit
5.00.2 2.0 1.8
External Dimensions MT-100(TO3P)
15.60.4 9.6 4.80.2 2.00.1
A A
19.90.3
V
4.0
a b
o3.20.1
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
0.65 +0.2 -0.1 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 40 RL () 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 10 IB2 (mA) -10 ton (s) 0.8typ tstg (s) 4.0typ tf (s) 1.2typ
Weight : Approx 6.0g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
15
VCE( sat ) - IB Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at)( V ) 3
I C - V BE Temperature Characteristics (Typical)
15 (V C E= 4V)
10mA
50mA
3mA
2m A
1.5 mA
1. 0m A
Collector Current I C( A)
10
0.5mA
2
Collector Current I C (A)
0. 8m A
10
emp
mp) e Te (Cas 25C
-30C
IC=.15A I C =.10A 1 IC=.5A
)
eT
0
0
2
4
6
0 0.2
0.5
1
5
10
50
100 200
0
0
125
1 Base-Emittor Voltage V B E( V)
C (
I B= 0.3mA
5
(Cas
5
Cas
e Te
mp)
2
2.2
Collector-Emitter Voltage V C E( V)
Base Current I B( mA)
(VCE=4V) 50000 DC C urrent G ain h FE DC C urrent G ain h FE 50000
12 5C
(VCE=4V)
j- a( C/W)
hFE - IC Characteristics (Typical)
h FE - I C Temperature Characteristics (Typical)
j-a - t Characteristics
3.0
Typ
10000 5000
Transient Thermal Resistance
10000 5000
1.0
25
C
0.5
-
C 30
1000 500 02 0.5 1 Collector Current I C( A) 5 10 15
1000 500 02 0.5 1 Collector Current I C( A) 5 10 15
0.1
1
10
100 Time t(ms)
1000 2000
f T - IE Characteristics (Typical)
(V C E= 12V) 80
Safe Operating Area (Single Pulse)
130
P c - T a Derating
Maxim um Power Dissip ation P C( W)
Cut- off F req uency f T( M H Z)
60
100
W ith In fin ite he
40
at si nk
50
20
0 -0.02 -0.05 -01
-0.5
-1
-5
-10
3.5 0
Without Heatsink 0 25 50 75 100 125 150
Emitter Current I E( A)
Ambient Temperature Ta(C)
158


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